Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory

Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory

Abstract Ferroelectric memories with ultralow‐power‐consumption are attracting a great deal of interest with the ever‐increasing demand for information storage in wearable electronics. However, sufficient scalability, semiconducting compatibility, and robust flexibility of the ferroelectric memories...

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Bibliographic Details
Main Authors: Houfang Liu, Tianqi Lu, Yuxing Li, Zhenyi Ju, Ruiting Zhao, Jingzhou Li, Minghao Shao, Hainan Zhang, Renrong Liang, Xiao Renshaw Wang, Rui Guo, Jingsheng Chen, Yi Yang, Tian‐Ling Ren
Format: Article
Language:English
Published: Wiley 2020-10-01
Series:Advanced Science
Subjects:
ferroelectric materials
flexible electronics
nonvolatile memory
quasi‐van der Waals heteroepitaxy
thin film transistors
Online Access:https://doi.org/10.1002/advs.202001266

Internet

https://doi.org/10.1002/advs.202001266

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