Ni induced few-layer graphene growth at low temperature by pulsed laser deposition
We have used pulsed laser deposition to fabricate graphene on catalytic nickel thin film at reduced temperature of 650 °C. Non-destructive micro-Raman spectroscopic study on our samples, measuring 1x1 cm2 each, has revealed few-layer graphene formation. Bi-, tri-, and few-layer graphene growth has b...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2011-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.3602855 |