On-Chip Thermal Insulation Using Porous GaN

This study focuses on the thermal characterization of porous gallium nitride (GaN) using<br />an extended 3ω method. Porous semiconductor materials provide a solution to the need for on-chip<br />thermal insulation, a fundamental requirement for low-power, high-speed and high-accuracy<...

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Bibliographic Details
Main Authors: Bogdan F. Spiridon, Peter H. Griffin, John C. Jarman, Yingjun Liu, Tongtong Zhu, Andrea De Luca, Rachel A. Oliver, Florin Udrea
Format: Article
Language:English
Published: MDPI AG 2018-12-01
Series:Proceedings
Subjects:
GaN
Online Access:https://www.mdpi.com/2504-3900/2/13/776