On-Chip Thermal Insulation Using Porous GaN
This study focuses on the thermal characterization of porous gallium nitride (GaN) using<br />an extended 3ω method. Porous semiconductor materials provide a solution to the need for on-chip<br />thermal insulation, a fundamental requirement for low-power, high-speed and high-accuracy<...
Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2018-12-01
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Series: | Proceedings |
Subjects: | |
Online Access: | https://www.mdpi.com/2504-3900/2/13/776 |