Electronic Structure Characterization of Hydrogen Terminated n-type Silicon Passivated by Benzoquinone-Methanol Solutions

Electronic Structure Characterization of Hydrogen Terminated n-type Silicon Passivated by Benzoquinone-Methanol Solutions

The electrical passivation mechanism of benzoquinone-methanol solutions on silicon has been examined through the study of the silicon surface electronic structure. Surface photovoltage (SPV) measurements using both X-ray photoelectron spectroscopy (XPS) and scanning Kelvin probe microscopy (SKPM) in...

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Bibliographic Details
Main Authors: Meixi Chen, James H. Hack, Xi Lin, Anderson Janotti, Robert L. Opila
Format: Article
Language:English
Published: MDPI AG 2018-03-01
Series:Coatings
Subjects:
silicon
surface passivation
band bending
surface photovoltage
surface dipole
accumulation layer
benzoquinone
Online Access:http://www.mdpi.com/2079-6412/8/3/108

Internet

http://www.mdpi.com/2079-6412/8/3/108

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