Oxygen related defects and vacancy clusters identified in sputtering grown UOx thin films by positron annihilation techniques

Oxygen related defects and vacancy clusters identified in sputtering grown UOx thin films by positron annihilation techniques

We experimentally studied the formation of vacancy clusters and oxygen related defects in uranium oxide (UOx) thin films (<70 nm) changing the stoichiometry in the x = 2.2–3.5 range. Films were deposited on Si(001) by DC magnetron sputtering varying the substrate temperature (room temperature, 40...

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Bibliographic Details
Main Authors: C. Macchi, A. Somoza, J. Guimpel, S. Suárez, W. Egger, C. Hugenschmidt, S. Mariazzi, R.S. Brusa
Format: Article
Language:English
Published: Elsevier 2021-08-01
Series:Results in Physics
Subjects:
Uranium oxide
Thin films
Sub-superficial defects distribution
Point defects
Positron annihilation spectroscopy
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379721006239

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http://www.sciencedirect.com/science/article/pii/S2211379721006239

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