Impact of Surface Treatments and Post-Deposition Annealing Upon Interfacial Property of ALD-Al₂O₃ on a-Plane GaN
Optimization of interface characteristics between dielectric and non-polar GaN surface is very important and urgent for vertical GaN MOS device whose channel is perpendicular to the conventional cplane. In this work, the effects of piranha cleaning and N2 post deposition annealing (PDA) to the inter...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9184040/ |