ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory
Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top elec...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2021-01-01
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Series: | IEEE Access |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9490229/ |