Ab-Initio Calculations of Oxygen Vacancy in Ga2O3 Crystals

Ab-Initio Calculations of Oxygen Vacancy in Ga2O3 Crystals

Gallium oxide β-Ga2O3 is an important wide-band gap semiconductor. In this study, we have calculated the formation energy and transition levels of oxygen vacancies in β-Ga2O3 crystal using the B3LYP hybrid exchange-correlation functional within the LCAO-DFT approach. The obtained electronic charge r...

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Bibliographic Details
Main Authors: Usseinov A., Koishybayeva Zh., Platonenko A., Akilbekov A., Purans J., Pankratov V., Suchikova Y., Popov A. I.
Format: Article
Language:English
Published: Sciendo 2021-04-01
Series:Latvian Journal of Physics and Technical Sciences
Subjects:
β-ga2o3
ab-initio calculations
band structure
dft
oxygen vacancy
Online Access:https://doi.org/10.2478/lpts-2021-0007

Internet

https://doi.org/10.2478/lpts-2021-0007

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