Effect of Quantum Barrier Thickness in the Multiple-Quantum-Well Active Region of GaInN/GaN Light-Emitting Diodes
The dependence of the polarization-induced electric field in GaInN/GaN multiple-quantum-well light-emitting diodes (LEDs) on the GaN quantum barrier (QB) thickness is investigated. Electrostatic arguments and simulations predict that a thin QB thickness reduces the electric field in the quantum well...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2013-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/6576153/ |