The Effect of RF Sputtering Conditions on the Physical Characteristics of Deposited GeGaN Thin Film
Ge<sub>0.07</sub>GaN films were successfully made on Si (100), SiO<sub>2</sub>/Si (100) substrates by a radio frequency reactive sputtering technique at various deposition conditions listed as a range of 100−400 °C and 90−150 W with a single ceram...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-10-01
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| Series: | Coatings |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-6412/9/10/645 |