The Effect of RF Sputtering Conditions on the Physical Characteristics of Deposited GeGaN Thin Film
Ge<sub>0.07</sub>GaN films were successfully made on Si (100), SiO<sub>2</sub>/Si (100) substrates by a radio frequency reactive sputtering technique at various deposition conditions listed as a range of 100−400 °C and 90−150 W with a single ceram...
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MDPI AG
2019-10-01
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| Series: | Coatings |
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| Online Access: | https://www.mdpi.com/2079-6412/9/10/645 |
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doaj-af63628080544ea19441b6ba7dbae08f2020-11-25T02:29:51ZengMDPI AGCoatings2079-64122019-10-0191064510.3390/coatings9100645coatings9100645The Effect of RF Sputtering Conditions on the Physical Characteristics of Deposited GeGaN Thin FilmCao Phuong Thao0Dong-Hau Kuo1Thi Tran Anh Tuan2Kim Anh Tuan3Nguyen Hoang Vu4Thach Thi Via Sa Na5Khau Van Nhut6Nguyen Van Sau7School of Engineering and Technology, Tra Vinh University, Tra Vinh 87000, VietnamDepartment of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, TaiwanSchool of Basic Sciences, Tra Vinh University, Tra Vinh 87000, VietnamSchool of Engineering and Technology, Tra Vinh University, Tra Vinh 87000, VietnamSchool of Engineering and Technology, Tra Vinh University, Tra Vinh 87000, VietnamSchool of Engineering and Technology, Tra Vinh University, Tra Vinh 87000, VietnamSchool of Engineering and Technology, Tra Vinh University, Tra Vinh 87000, VietnamSchool of Basic Sciences, Tra Vinh University, Tra Vinh 87000, VietnamGe<sub>0.07</sub>GaN films were successfully made on Si (100), SiO<sub>2</sub>/Si (100) substrates by a radio frequency reactive sputtering technique at various deposition conditions listed as a range of 100−400 °C and 90−150 W with a single ceramic target containing 7 at % dopant Ge. The results showed that different RF sputtering power and heating temperature conditions affected the structural, electrical and optical properties of the sputtered Ge<sub>0.07</sub>GaN films. The as-deposited Ge<sub>0.07</sub>GaN films had an structural polycrystalline. The GeGaN films had a distorted structure under different growth conditions. The deposited-150 W Ge<sub>0.07</sub>GaN film exhibited the lowest photoenergy of 2.96 eV, the highest electron concentration of 5.50 × 10<sup>19</sup> cm<sup>−3</sup>, a carrier conductivity of 35.2 S∙cm<sup>−1</sup> and mobility of 4 cm<sup>2</sup>·V<sup>−1</sup>∙s<sup>−1</sup>.https://www.mdpi.com/2079-6412/9/10/645ge donorgangrowth conditionheating substrate temperaturerf powerreactive sputteringthin film property |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Cao Phuong Thao Dong-Hau Kuo Thi Tran Anh Tuan Kim Anh Tuan Nguyen Hoang Vu Thach Thi Via Sa Na Khau Van Nhut Nguyen Van Sau |
| spellingShingle |
Cao Phuong Thao Dong-Hau Kuo Thi Tran Anh Tuan Kim Anh Tuan Nguyen Hoang Vu Thach Thi Via Sa Na Khau Van Nhut Nguyen Van Sau The Effect of RF Sputtering Conditions on the Physical Characteristics of Deposited GeGaN Thin Film Coatings ge donor gan growth condition heating substrate temperature rf power reactive sputtering thin film property |
| author_facet |
Cao Phuong Thao Dong-Hau Kuo Thi Tran Anh Tuan Kim Anh Tuan Nguyen Hoang Vu Thach Thi Via Sa Na Khau Van Nhut Nguyen Van Sau |
| author_sort |
Cao Phuong Thao |
| title |
The Effect of RF Sputtering Conditions on the Physical Characteristics of Deposited GeGaN Thin Film |
| title_short |
The Effect of RF Sputtering Conditions on the Physical Characteristics of Deposited GeGaN Thin Film |
| title_full |
The Effect of RF Sputtering Conditions on the Physical Characteristics of Deposited GeGaN Thin Film |
| title_fullStr |
The Effect of RF Sputtering Conditions on the Physical Characteristics of Deposited GeGaN Thin Film |
| title_full_unstemmed |
The Effect of RF Sputtering Conditions on the Physical Characteristics of Deposited GeGaN Thin Film |
| title_sort |
effect of rf sputtering conditions on the physical characteristics of deposited gegan thin film |
| publisher |
MDPI AG |
| series |
Coatings |
| issn |
2079-6412 |
| publishDate |
2019-10-01 |
| description |
Ge<sub>0.07</sub>GaN films were successfully made on Si (100), SiO<sub>2</sub>/Si (100) substrates by a radio frequency reactive sputtering technique at various deposition conditions listed as a range of 100−400 °C and 90−150 W with a single ceramic target containing 7 at % dopant Ge. The results showed that different RF sputtering power and heating temperature conditions affected the structural, electrical and optical properties of the sputtered Ge<sub>0.07</sub>GaN films. The as-deposited Ge<sub>0.07</sub>GaN films had an structural polycrystalline. The GeGaN films had a distorted structure under different growth conditions. The deposited-150 W Ge<sub>0.07</sub>GaN film exhibited the lowest photoenergy of 2.96 eV, the highest electron concentration of 5.50 × 10<sup>19</sup> cm<sup>−3</sup>, a carrier conductivity of 35.2 S∙cm<sup>−1</sup> and mobility of 4 cm<sup>2</sup>·V<sup>−1</sup>∙s<sup>−1</sup>. |
| topic |
ge donor gan growth condition heating substrate temperature rf power reactive sputtering thin film property |
| url |
https://www.mdpi.com/2079-6412/9/10/645 |
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