Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN

Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN

The compliant behavior of densely packed 10 &#215; 10 &#181;m<sup>2</sup> square patterned InGaN layers on top of porous GaN is demonstrated. The elastic relaxation of the InGaN layers is enabled by the low stiffness of the porous GaN under layer. High resolution X-ray diffractio...

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Bibliographic Details
Main Authors: Shubhra S. Pasayat, Chirag Gupta, Yifan Wang, Steven P. DenBaars, Shuji Nakamura, Stacia Keller, Umesh K. Mishra
Format: Article
Language:English
Published: MDPI AG 2020-01-01
Series:Materials
Subjects:
indium gallium nitride
gallium nitride
porous gan
relaxed ingan pseudo- substrate
compliant pseudo-substrate
composition pulling effect
mocvd
Online Access:https://www.mdpi.com/1996-1944/13/1/213

Internet

https://www.mdpi.com/1996-1944/13/1/213

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