High Threshold Voltage Normally off Ultra-Thin-Barrier GaN MISHEMT with MOCVD-Regrown Ohmics and Si-Rich LPCVD-SiNx Gate Insulator

High Threshold Voltage Normally off Ultra-Thin-Barrier GaN MISHEMT with MOCVD-Regrown Ohmics and Si-Rich LPCVD-SiNx Gate Insulator

A high threshold voltage (V<sub>TH</sub>) normally off GaN MISHEMTs with a uniform threshold voltage distribution (V<sub>TH</sub> = 4.25 ± 0.1 V at I<sub>DS</sub> = 1 μA/mm) were demonstrated by the selective area ohmic regrowth technique together with an Si-rich...

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Bibliographic Details
Main Authors: Hsiang-Chun Wang, Hsien-Chin Chiu, Chong-Rong Huang, Hsuan-Ling Kao, Feng-Tso Chien
Format: Article
Language:English
Published: MDPI AG 2020-05-01
Series:Energies
Subjects:
normally off
MISHEMT
MOCVD-regrowth
leakage current
dynamic R<sub>ON</sub>
Online Access:https://www.mdpi.com/1996-1073/13/10/2479

Internet

https://www.mdpi.com/1996-1073/13/10/2479

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