Area-Scalable 10<sup>9</sup>-Cycle-High-Endurance FeFET of Strontium Bismuth Tantalate Using a Dummy-Gate Process
Strontium bismuth tantalate (SBT) ferroelectric-gate field-effect transistors (FeFETs) with channel lengths of 85 nm were fabricated by a replacement-gate process. They had metal/ferroelectric/insulator/semiconductor stacked-gate structures of Ir/SBT/HfO<sub>2</sub>/Si. In the fabricatio...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-01-01
|
| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/11/1/101 |