A Comparative Study of E-Beam Deposited Gate Dielectrics on Channel Width-Dependent Performance and Reliability of <i>a</i>-IGZO Thin-Film Transistors
A comparative study on the effects of e-beam deposited gate dielectrics for amorphous indium gallium zinc oxide (<i>a</i>-IGZO) thin-film transistors (TFTs) has been carried out using SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, and Ta<sub>2<...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2018-12-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/11/12/2502 |