A Novel Nanoscale FDSOI MOSFET with Block-Oxide
We demonstrate improved device performance by applying oxide sidewall spacer technology to a block-oxide-enclosed Si body to create a fully depleted silicon-on-insulator (FDSOI) nMOSFET, which overcomes the need for a uniform ultrathin silicon film. The presence of block-oxide along the sidewalls of...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2013-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2013/627873 |