Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter

Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter

In this study, ferroelectric FETs (FeFETs) and CMOS inverters are fabricated and analyzed, exhibiting 13% of 593 devices with sub-60 mV subthreshold swing (SS) at room temperature. Forming gas annealing (FGA) is found to not only enhance ferroelectricity but also significantly improve FeFET electros...

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Bibliographic Details
Main Authors: Po-Jung Sung, Chun-Jung Su, Shih-Hsuan Lo, Fu-Kuo Hsueh, Darsen D. Lu, Yao-Jen Lee, Tien-Sheng Chao
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
FeFET
forming gas annealing (FGA)
steep slop
HfZrO₂
ferroelectric
Online Access:https://ieeexplore.ieee.org/document/9063644/

Internet

https://ieeexplore.ieee.org/document/9063644/

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