Compensation effects on hole transport in C-doped p-type GaPN dilute nitrides
Experimental studies of transport in GaPN dilute nitrides have evidenced low hole mobilities, which limit their applications in optoelectronics. Theoretical work to date has not explained the origin of such low hole mobilities. Here, we use full band cellular Monte Carlo methods to investigate hole...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0043001 |