Germanium on Silicon for Near-Infrared Light Sensing
We review near-infrared detectors in germanium grown on silicon. We discuss <i>pn</i> and <i>pin</i> photodiodes based on Ge deposited on Si by a number of techniques, including thermal evaporation; the optical and electronic characterization of Ge-on-Si heterostructures usin...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2009-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/5075653/ |