Coupling sensitivity in concentric metal–insulator–semiconductor tunnel diodes by controlling the lateral injection electrons
Coupling sensitivity between two Al–SiO2–pSi metal–insulator–semiconductor tunnel diodes (MISTDs) was examined by sweeping bias voltage on one MISTD and detecting ground current or floating voltage at another nearby MISTD with the substrate being grounded when performing the measurement. A strong co...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0022326 |