Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth
The development of new power devices taking full advantage of the potential of diamond has prompted the design of innovative 3D structures. This implies the overgrowth towards various crystallographic orientations. To understand the consequences of such growth geometries on the defects generation, a...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2018-10-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2079-4991/8/10/814 |