Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep Submicrometer MOSFET'S

Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep Submicrometer MOSFET'S

In this paper, a detailed experimental study of channel length, drain voltage and temperature dependence of substrate current Isub in submicrometer MOSFET's is presented. Impact ionization rate α is remarkably increased with decreasing channel length L and go up from 10-7 to 6, 7 ⋅ 10−7 when L...

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Bibliographic Details
Main Authors: Y. Amhouche, A. El Abbassi, K. Raïs, R. Rmaily
Format: Article
Language:English
Published: Hindawi Limited 2001-01-01
Series:Active and Passive Electronic Components
Subjects:
Submicrometer MOSFET's
Impact ionization
Substrate current
Temperature
Channel length.
Online Access:http://dx.doi.org/10.1155/2001/65128

Internet

http://dx.doi.org/10.1155/2001/65128

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