Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep Submicrometer MOSFET'S
In this paper, a detailed experimental study of channel length, drain voltage and temperature dependence of substrate current Isub in submicrometer MOSFET's is presented. Impact ionization rate α is remarkably increased with decreasing channel length L and go up from 10-7 to 6, 7 ⋅ 10−7 when L...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
Hindawi Limited
2001-01-01
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Series: | Active and Passive Electronic Components |
Subjects: | |
Online Access: | http://dx.doi.org/10.1155/2001/65128 |