Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Film

Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Film

Abstract We studied the reverse current emission mechanism of the Mo/β-Ga2O3 Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K. The variation of reverse current with the electric field indicates that the Schottky emission is the dominant...

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Bibliographic Details
Main Authors: Zhuangzhuang Hu, Qian Feng, Zhaoqing Feng, Yuncong Cai, Yixian Shen, Guangshuo Yan, Xiaoli Lu, Chunfu Zhang, Hong Zhou, Jincheng Zhang, Yue Hao
Format: Article
Language:English
Published: SpringerOpen 2019-01-01
Series:Nanoscale Research Letters
Subjects:
β-Ga2O3 Schottky diode
Carrier transport mechanism
Reverse bias
Schottky emission
Breakdown voltage
Online Access:http://link.springer.com/article/10.1186/s11671-018-2837-2

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http://link.springer.com/article/10.1186/s11671-018-2837-2

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