Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Film
Abstract We studied the reverse current emission mechanism of the Mo/β-Ga2O3 Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K. The variation of reverse current with the electric field indicates that the Schottky emission is the dominant...
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doaj-b53c42216e3b44b9832373ee6da876232020-11-25T02:44:58ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-01-011411710.1186/s11671-018-2837-2Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin FilmZhuangzhuang Hu0Qian Feng1Zhaoqing Feng2Yuncong Cai3Yixian Shen4Guangshuo Yan5Xiaoli Lu6Chunfu Zhang7Hong Zhou8Jincheng Zhang9Yue Hao10State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian UniversityAbstract We studied the reverse current emission mechanism of the Mo/β-Ga2O3 Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K. The variation of reverse current with the electric field indicates that the Schottky emission is the dominant carrier transport mechanism under reverse bias rather than the Frenkel–Poole trap-assisted emission model. Moreover, a breakdown voltage of 300 V was obtained in Fluorinert ambient with an average electric field of 3 MV/cm in Mo/β-Ga2O3 Schottky barrier diode. The effects of the surface states, on the electric field distribution, were also analyzed by TCAD simulation. With the negative surface charge densities increasing, the peak electric field reduces monotonously. Furthermore, the Schottky barrier height inhomogeneity under forward bias was also discussed.http://link.springer.com/article/10.1186/s11671-018-2837-2β-Ga2O3 Schottky diodeCarrier transport mechanismReverse biasSchottky emissionBreakdown voltage |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Zhuangzhuang Hu Qian Feng Zhaoqing Feng Yuncong Cai Yixian Shen Guangshuo Yan Xiaoli Lu Chunfu Zhang Hong Zhou Jincheng Zhang Yue Hao |
spellingShingle |
Zhuangzhuang Hu Qian Feng Zhaoqing Feng Yuncong Cai Yixian Shen Guangshuo Yan Xiaoli Lu Chunfu Zhang Hong Zhou Jincheng Zhang Yue Hao Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Film Nanoscale Research Letters β-Ga2O3 Schottky diode Carrier transport mechanism Reverse bias Schottky emission Breakdown voltage |
author_facet |
Zhuangzhuang Hu Qian Feng Zhaoqing Feng Yuncong Cai Yixian Shen Guangshuo Yan Xiaoli Lu Chunfu Zhang Hong Zhou Jincheng Zhang Yue Hao |
author_sort |
Zhuangzhuang Hu |
title |
Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Film |
title_short |
Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Film |
title_full |
Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Film |
title_fullStr |
Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Film |
title_full_unstemmed |
Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Film |
title_sort |
experimental and theoretical studies of mo/au schottky contact on mechanically exfoliated β-ga2o3 thin film |
publisher |
SpringerOpen |
series |
Nanoscale Research Letters |
issn |
1931-7573 1556-276X |
publishDate |
2019-01-01 |
description |
Abstract We studied the reverse current emission mechanism of the Mo/β-Ga2O3 Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K. The variation of reverse current with the electric field indicates that the Schottky emission is the dominant carrier transport mechanism under reverse bias rather than the Frenkel–Poole trap-assisted emission model. Moreover, a breakdown voltage of 300 V was obtained in Fluorinert ambient with an average electric field of 3 MV/cm in Mo/β-Ga2O3 Schottky barrier diode. The effects of the surface states, on the electric field distribution, were also analyzed by TCAD simulation. With the negative surface charge densities increasing, the peak electric field reduces monotonously. Furthermore, the Schottky barrier height inhomogeneity under forward bias was also discussed. |
topic |
β-Ga2O3 Schottky diode Carrier transport mechanism Reverse bias Schottky emission Breakdown voltage |
url |
http://link.springer.com/article/10.1186/s11671-018-2837-2 |
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