Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs

Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs

The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility transistors (HEMT) used in high power amplifiers are systematically investigated b...

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Bibliographic Details
Main Authors: Huaixin Guo, Tangsheng Chen, Shang Shi
Format: Article
Language:English
Published: MDPI AG 2020-01-01
Series:Micromachines
Subjects:
algan/gan hemts
thermal simulation
transient channel temperature
pulse width
gate structures
Online Access:https://www.mdpi.com/2072-666X/11/1/76

Internet

https://www.mdpi.com/2072-666X/11/1/76

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