An Improved Investigation into the Effects of the Temperature-Dependent Parasitic Elements on the Losses of SiC MOSFETs
This paper presents an improved investigation into the effects of temperature-dependent parasitic elements on the silicon carbide (SiC) MOSFET power losses. Based on the physical knowledge of MOSFET, a circuit-level loss analytical model is proposed, which takes the parasitic elements of the power d...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-10-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/10/20/7192 |