New Analytical Model for Nanoscale Tri-Gate SOI MOSFETs Including Quantum Effects

New Analytical Model for Nanoscale Tri-Gate SOI MOSFETs Including Quantum Effects

In this paper, an analytical model for tri-Gate (TG) MOSFETs considering quantum effects is presented. The proposed model is based on the analytical solution of Schrodinger-Poisson's equation using variational approach. An analytical expression of the inversion charge distribution function (ICD...

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Bibliographic Details
Main Authors: P. Vimala, N. B. Balamurugan
Format: Article
Language:English
Published: IEEE 2014-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Device modeling
energy quantization
inversion charge
Poisson–Schrodinger equation
tri-gate MOSFET
Online Access:https://ieeexplore.ieee.org/document/6705594/

Internet

https://ieeexplore.ieee.org/document/6705594/

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