Bias polarity-sensitive electrical failure characteristics of ZnSe nanowire in metal–semiconductor–metal nanostructure
The effect of bias polarity on the electrical breakdown behavior of the single ZnSe nanowire (NW) in the metal–semiconductor–metal (M–S–M) nanostructure under high current density and high bias conditions has been studied in the present paper. The experimental results show that the failure of the Zn...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2014-04-01
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| Series: | Progress in Natural Science: Materials International |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S1002007114000343 |