2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge

2.3 kV 4H-SiC split-gate (SG) planar accumulation-channel power MOSFETs have been successfully manufactured in a 6 inch commercial foundry with good parametric distributions. The measured electrical characteristics of these devices are compared with conventional ACCUFETs manufactured with the same c...

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Bibliographic Details
Main Authors:	Aditi Agarwal, Kijeong Han, B. Jayant Baliga
Format:	Article
Language:	English
Published:	IEEE 2020-01-01
Series:	IEEE Journal of the Electron Devices Society
Subjects:	4H-SiC 23 kV devices accumulation channel Cgd planar-gate MOSFET Qgd
Online Access:	https://ieeexplore.ieee.org/document/9081981/

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record_format	Article
spelling	doaj-b633b00133a24ef9be2bd379545e8c532021-03-29T18:51:10ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-01849950410.1109/JEDS.2020.299135590819812.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate ChargeAditi Agarwal0https://orcid.org/0000-0003-4594-3398Kijeong Han1https://orcid.org/0000-0002-1006-0694B. Jayant Baliga2Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USADepartment of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USADepartment of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA2.3 kV 4H-SiC split-gate (SG) planar accumulation-channel power MOSFETs have been successfully manufactured in a 6 inch commercial foundry with good parametric distributions. The measured electrical characteristics of these devices are compared with conventional ACCUFETs manufactured with the same cell-pitch and process to quantify the improved performance. The gate charge and high-frequency figures-of-merit (HF-FOM) of the 2.3 kV SG-MOSFETs were experimentally verified to be a factor of 1.8x better than that of the conventional MOSFETs with no difference in specific on-resistance.https://ieeexplore.ieee.org/document/9081981/4H-SiC23 kV devicesaccumulation channelCgdplanar-gate MOSFETQgd
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Aditi Agarwal Kijeong Han B. Jayant Baliga
spellingShingle	Aditi Agarwal Kijeong Han B. Jayant Baliga 2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge IEEE Journal of the Electron Devices Society 4H-SiC 23 kV devices accumulation channel Cgd planar-gate MOSFET Qgd
author_facet	Aditi Agarwal Kijeong Han B. Jayant Baliga
author_sort	Aditi Agarwal
title	2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge
title_short	2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge
title_full	2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge
title_fullStr	2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge
title_full_unstemmed	2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge
title_sort	2.3 kv 4h-sic accumulation-channel split-gate planar power mosfets with reduced gate charge
publisher	IEEE
series	IEEE Journal of the Electron Devices Society
issn	2168-6734
publishDate	2020-01-01
description	2.3 kV 4H-SiC split-gate (SG) planar accumulation-channel power MOSFETs have been successfully manufactured in a 6 inch commercial foundry with good parametric distributions. The measured electrical characteristics of these devices are compared with conventional ACCUFETs manufactured with the same cell-pitch and process to quantify the improved performance. The gate charge and high-frequency figures-of-merit (HF-FOM) of the 2.3 kV SG-MOSFETs were experimentally verified to be a factor of 1.8x better than that of the conventional MOSFETs with no difference in specific on-resistance.
topic	4H-SiC 23 kV devices accumulation channel Cgd planar-gate MOSFET Qgd
url	https://ieeexplore.ieee.org/document/9081981/
work_keys_str_mv	AT aditiagarwal 23kv4hsicaccumulationchannelsplitgateplanarpowermosfetswithreducedgatecharge AT kijeonghan 23kv4hsicaccumulationchannelsplitgateplanarpowermosfetswithreducedgatecharge AT bjayantbaliga 23kv4hsicaccumulationchannelsplitgateplanarpowermosfetswithreducedgatecharge
_version_	1724196387601514496

2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge

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