Design and analysis of IGZO thin film transistor for AMOLED pixel circuit using double-gate tri active layer channel
In this research work, Amorphous Indium–Gallium–Zinc–Oxide (α-IGZO) thin-film transistor consisting of Tri-Active Layer (TAL) channel have been designed in a double-gate structure. The electrical performance of the novel device structure has been analyzed with its output and transfer characteristics...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2019-04-01
|
| Series: | Heliyon |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2405844018380812 |