Thermal Effect and Frequency Response Analyses on Heterojunction Bipolar Power Transistor
Heterojunction bipolar transistors (HBT) based on Npn AlGaAs/GaAs material system have attracted considerable attention for microwave power and digital applications due to their high speed and high current capabilities. In this paper, a numerical model based on the Npn AlGaAs/GaAs HBT structure for...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2001-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2001/78036 |