EPITAXIAL FILMS OF ZINC SELENIDE ON POROUS SILICON
ZnSe epitaxial films are grown on (111)- and (100)-oriented Si substrates with a porous buffer layer by the thermal evaporation of ZnSe compound. The crystal structure of the deposited films was controlled by X-ray diffraction. The morphology of the films was studied by high-resolution scanning elec...
Main Authors: | , , , |
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Format: | Article |
Language: | Russian |
Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
Subjects: | |
Online Access: | https://doklady.bsuir.by/jour/article/view/559 |