Numerical Study of Sub-Gap Density of States Dependent Electrical Characteristics in Amorphous In-Ga-Zn-O Thin-Film Transistors

Numerical Study of Sub-Gap Density of States Dependent Electrical Characteristics in Amorphous In-Ga-Zn-O Thin-Film Transistors

We demonstrate the effect of the sub-gap density of states (DOS) on electrical characteristics in amorphous indium-gallium-zinc (IGZO) thin-film transistors (TFTs). Numerical analysis based on a two-dimensional device simulator Atlas controlled the sub-gap DOS parameters such as tail acceptor-like s...

Full description

Bibliographic Details
Main Authors: Do-Kyung Kim, Jihwan Park, Xue Zhang, Jaehoon Park, Jin-Hyuk Bae
Format: Article
Language:English
Published: MDPI AG 2020-10-01
Series:Electronics
Subjects:
In-Ga-Zn-O
thin-film transistors
sub-gap density of states
electrical characteristics
numerical analysis
Online Access:https://www.mdpi.com/2079-9292/9/10/1652

Internet

https://www.mdpi.com/2079-9292/9/10/1652

Similar Items