Plausible Physical Mechanisms for Unusual Volatile/Non- Volatile Resistive Switching in HfO<sub>2</sub>-Based Stacks
Memristive devices made of silicon compatible simple oxides are of great interest for storage and logic devices in future adaptable electronics and non-digital computing applications. A series of highly desirable properties observed in an atomic-layer-deposited hafnia-based stack, triggered our inte...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-02-01
|
| Series: | Condensed Matter |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2410-3896/6/1/7 |