Sequential conversion from line defects to atomic clusters in monolayer WS2
Abstract Transition metal dichalcogenides (TMD), which is composed of a transition metal atom and chalcogen ion atoms, usually form vacancies based on the knock-on threshold of each atom. In particular, when electron beam is irradiated on a monolayer TMD such as MoS2 and WS2, S vacancies are formed...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2020-11-01
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| Series: | Applied Microscopy |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s42649-020-00047-2 |