Effects of Electric Fields on the Switching Properties Improvements of RRAM Device With a Field-Enhanced Elevated-Film-Stack Structure
In this paper, a resistive random access memory (RRAM) device using a field-enhanced elevated-film-stack (EFS) structure with a 15-nm-thick HfO<sub>x</sub> dielectric layer was fabricated and measured to achieve a forming voltage (V<sub>Forming</sub>) of 2.04 V, set voltage (...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8353384/ |