A Novel High <i>Q</i> Lamé-Mode Bulk Resonator with Low Bias Voltage

This work reports a novel silicon on insulator (SOI)-based high quality factor (<i>Q</i> factor) Lamé-mode bulk resonator which can be driven into vibration by a bias voltage as low as 3 V. A SOI-based fabrication process was developed to produce the resonators with 70 nm air gaps, which...

Full description

Bibliographic Details
Main Authors: Tianyun Wang, Zeji Chen, Qianqian Jia, Quan Yuan, Jinling Yang, Fuhua Yang
Format: Article
Language:English
Published: MDPI AG 2020-07-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/11/8/737