A Novel High <i>Q</i> Lamé-Mode Bulk Resonator with Low Bias Voltage
This work reports a novel silicon on insulator (SOI)-based high quality factor (<i>Q</i> factor) Lamé-mode bulk resonator which can be driven into vibration by a bias voltage as low as 3 V. A SOI-based fabrication process was developed to produce the resonators with 70 nm air gaps, which...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-07-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/11/8/737 |