Surface passivation of c-Si for silicon heterojunction solar cells using high-pressure hydrogen diluted plasmas

Surface passivation of c-Si for silicon heterojunction solar cells using high-pressure hydrogen diluted plasmas

In this work we demonstrate excellent c-Si surface passivation by depositing a-Si:H in the high-pressure and high hydrogen dilution regime. By using high hydrogen dilution of the precursor gases during deposition the hydrogen content of the layers is sufficiently increased, while the void fraction i...

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Bibliographic Details
Main Authors: Dimitrios Deligiannis, Ravi Vasudevan, Arno H. M. Smets, René A. C. M. M. van Swaaij, Miro Zeman
Format: Article
Language:English
Published: AIP Publishing LLC 2015-09-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4931821

Internet

http://dx.doi.org/10.1063/1.4931821

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