RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System

We report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved. It was found that the reduction of series resist...

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Bibliographic Details
Main Authors: Farahiyah Mustafa, Abdul Manaf Hashim
Format: Article
Language:English
Published: MDPI AG 2014-02-01
Series:Sensors
Subjects:
Online Access:http://www.mdpi.com/1424-8220/14/2/3493