Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

The rapid increase in total transmission capacity within and between data centers requires the construction of low-cost, high-capacity optical transmitters. Since a tremendous number of transmitters are required, photonic integrated circuits (PICs) using Si photonics technology enabling the integrat...

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Bibliographic Details
Main Authors: Takuro Fujii, Tatsurou Hiraki, Takuma Aihara, Hidetaka Nishi, Koji Takeda, Tomonari Sato, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo
Format: Article
Language:English
Published: MDPI AG 2021-02-01
Series:Applied Sciences
Subjects:
epitaxial growth
direct bonding
semiconductor lasers
silicon photonics
photonic integrated circuits (PICs)
Online Access:https://www.mdpi.com/2076-3417/11/4/1801

Internet

https://www.mdpi.com/2076-3417/11/4/1801

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