An Electret-Augmented Low-Voltage MEMS Electrostatic Out-of-Plane Actuator for Acoustic Transducer Applications
Despite the development of energy-efficient devices in various applications, microelectromechanical system (MEMS) electrostatic actuators yet require high voltages to generate large displacements. In this respect, electrets exhibiting quasi-permanent electrical charges allow large fixed voltages to...
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doaj-b9310f708c294d909e41d1a9f2894bf42020-11-24T21:53:48ZengMDPI AGMicromachines2072-666X2020-03-0111326710.3390/mi11030267mi11030267An Electret-Augmented Low-Voltage MEMS Electrostatic Out-of-Plane Actuator for Acoustic Transducer ApplicationsChikako Sano0Manabu Ataka1Gen Hashiguchi2Hiroshi Toshiyoshi3Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, JapanInstitute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, JapanResearch Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu, Shizuoka 432-8011, JapanInstitute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, JapanDespite the development of energy-efficient devices in various applications, microelectromechanical system (MEMS) electrostatic actuators yet require high voltages to generate large displacements. In this respect, electrets exhibiting quasi-permanent electrical charges allow large fixed voltages to be integrated directly within electrode structures to reduce or eliminate the need of DC bias electronics. For verification, a biased electret layer was fabricated at the inner surface of a silicon on insulator (SOI) structure facing a 2 μm gap owing to the high compatibility of silicon micromachining and the potassium-ion-electret fabrication method. A electret-augmented actuator with an out-of-plane motion membrane reached a sound pressure level (SPL) of 50 dB maximum with AC input voltage of alone, indicating a potential for acoustic transducer usage such as microspeakers. Such devices with electret biasing require only the input signal voltage, thus contributing to reducing the overall power consumption of the device system.https://www.mdpi.com/2072-666X/11/3/267electretslow-voltage-drivenacoustic transducerssoi-mems |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Chikako Sano Manabu Ataka Gen Hashiguchi Hiroshi Toshiyoshi |
spellingShingle |
Chikako Sano Manabu Ataka Gen Hashiguchi Hiroshi Toshiyoshi An Electret-Augmented Low-Voltage MEMS Electrostatic Out-of-Plane Actuator for Acoustic Transducer Applications Micromachines electrets low-voltage-driven acoustic transducers soi-mems |
author_facet |
Chikako Sano Manabu Ataka Gen Hashiguchi Hiroshi Toshiyoshi |
author_sort |
Chikako Sano |
title |
An Electret-Augmented Low-Voltage MEMS Electrostatic Out-of-Plane Actuator for Acoustic Transducer Applications |
title_short |
An Electret-Augmented Low-Voltage MEMS Electrostatic Out-of-Plane Actuator for Acoustic Transducer Applications |
title_full |
An Electret-Augmented Low-Voltage MEMS Electrostatic Out-of-Plane Actuator for Acoustic Transducer Applications |
title_fullStr |
An Electret-Augmented Low-Voltage MEMS Electrostatic Out-of-Plane Actuator for Acoustic Transducer Applications |
title_full_unstemmed |
An Electret-Augmented Low-Voltage MEMS Electrostatic Out-of-Plane Actuator for Acoustic Transducer Applications |
title_sort |
electret-augmented low-voltage mems electrostatic out-of-plane actuator for acoustic transducer applications |
publisher |
MDPI AG |
series |
Micromachines |
issn |
2072-666X |
publishDate |
2020-03-01 |
description |
Despite the development of energy-efficient devices in various applications, microelectromechanical system (MEMS) electrostatic actuators yet require high voltages to generate large displacements. In this respect, electrets exhibiting quasi-permanent electrical charges allow large fixed voltages to be integrated directly within electrode structures to reduce or eliminate the need of DC bias electronics. For verification, a biased electret layer was fabricated at the inner surface of a silicon on insulator (SOI) structure facing a 2 μm gap owing to the high compatibility of silicon micromachining and the potassium-ion-electret fabrication method. A electret-augmented actuator with an out-of-plane motion membrane reached a sound pressure level (SPL) of 50 dB maximum with AC input voltage of alone, indicating a potential for acoustic transducer usage such as microspeakers. Such devices with electret biasing require only the input signal voltage, thus contributing to reducing the overall power consumption of the device system. |
topic |
electrets low-voltage-driven acoustic transducers soi-mems |
url |
https://www.mdpi.com/2072-666X/11/3/267 |
work_keys_str_mv |
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