Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing

Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing

Abstract In this paper, amorphous silicon nanowires (α-SiNWs) were synthesized on (100) Si substrate with silicon oxide film by Cu catalyst-driven solid-liquid-solid mechanism (SLS) during annealing process (1080 °C for 30 min under Ar/H2 atmosphere). Micro size Cu pattern fabrication decided whethe...

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Bibliographic Details
Main Authors: Zhishan Yuan, Chengyong Wang, Ke Chen, Zhonghua Ni, Yunfei Chen
Format: Article
Language:English
Published: SpringerOpen 2017-08-01
Series:Nanoscale Research Letters
Subjects:
α-SiNWs
Cu patterns
Annealing time
Resistivity
Online Access:http://link.springer.com/article/10.1186/s11671-017-2251-1

Internet

http://link.springer.com/article/10.1186/s11671-017-2251-1

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