Comparative Simulation Analysis of Process Parameter Variations in 20 nm Triangular FinFET
Technology scaling below 22 nm has brought several detrimental effects such as increased short channel effects (SCEs) and leakage currents. In deep submicron technology further scaling in gate length and oxide thickness can be achieved by changing the device structure of MOSFET. For 10–30 nm channel...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2017-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2017/5947819 |