Modulating Band Gap of Boron Doping in Amorphous Carbon Nano-Film

Modulating Band Gap of Boron Doping in Amorphous Carbon Nano-Film

Amorphous carbon (a-C) films are attracting considerable attention to due their large optical band gap (E<sub>opt</sub>) range of 1&#8722;4 eV. But the hopping conducting mechanism of boron doping a-C (a-C:B) is still mysterious. To exploring the intrinsic reasons behind the semicond...

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Bibliographic Details
Main Authors: Rui Zhu, Qiang Tao, Min Lian, Xiaokang Feng, Jiayu Liu, Meiyan Ye, Xin Wang, Shushan Dong, Tian Cui, Pinwen Zhu
Format: Article
Language:English
Published: MDPI AG 2019-05-01
Series:Materials
Subjects:
semiconductor
amorphous materials
carbon materials
Online Access:https://www.mdpi.com/1996-1944/12/11/1780

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https://www.mdpi.com/1996-1944/12/11/1780

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