An InGaAs/AlAsSb Avalanche Photodiode With a Small Temperature Coefficient of Breakdown
Dark current and avalanche gain M on AlAs<sub>0.56</sub>Sb<sub>0.44</sub> (hereafter referred to as AlAsSb) separate absorption multiplication (SAM) avalanche photodiodes (APDs) were measured at temperatures ranging from 77 K to 300 K. To avoid possible ambiguity in breakdown...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2013-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/6557436/ |