Improving Off-State Breakdown Voltage of a Double-Channel AlGaN/GaN HEMT with Air-Bridge Field Plate and Slant Field Plate
The off-state breakdown voltage of a double-channel AlGaN/GaN HEMT is improved by employing an air-bridge field plate (AFP) and a slant field plate at the gate electrode. It has been observed that using the AFP only can reduce the peak electric field under the gate edge to a certain extent, and a sl...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
KeAi Communications Co., Ltd.
2020-01-01
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| Series: | Solid State Electronics Letters |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2589208820300211 |