Crystallization and inter-diffusional behaviors in the formation of VO2(B) thin film with layered W-doping
Abstract To achieve a better material for uncooled infrared (IR) detector, polycrystalline VO2(B) thin films with layered W-doping were fabricated on Si substrates by magnetron sputtering, and the best temperature coefficient of resistance (TCR) value reached −4.1%/K. The film synthesis was in a two...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2017-09-01
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| Series: | Journal of Advanced Ceramics |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1007/s40145-017-0231-7 |