Constant-Current Gate Driver for GaN HEMTs Applied to Resonant Power Conversion
New semiconductor technology is enabling the design of more reliable and high-performance power converters. In particular, wide bandgap (WBG) silicon carbide (SiC) and gallium nitride (GaN) technologies provide faster switching times, higher operating temperature, and higher blocking voltage. Recent...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-04-01
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| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/14/9/2377 |