2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data
Experimental results obtained for 2.3 kV SiC planar-gate power JBSFETs with different cell topologies are analyzed in this article using analytical models and numerical simulations. All the accumulation-channel devices were simultaneously manufactured in a 6-inch commercial foundry with channel leng...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9352963/ |