The Influence of Quantum Confinement on Third-Order Nonlinearities in Porous Silicon Thin Films

The Influence of Quantum Confinement on Third-Order Nonlinearities in Porous Silicon Thin Films

We present an experimental investigation into the third-order nonlinearity of conventional crystalline (c-Si) and porous (p-Si) silicon with Z-scan technique at 800-nm and 2.4- μ m wavelengths. The Gaussian decomposition method is applied to extract the nonlinear refractive index, n 2...

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Bibliographic Details
Main Authors: Rihan Wu, Jack Collins, Leigh T. Canham, Andrey Kaplan
Format: Article
Language:English
Published: MDPI AG 2018-10-01
Series:Applied Sciences
Subjects:
third-order nonlinearity
self-focusing
TPA
porous silicon
Z-scan
Online Access:http://www.mdpi.com/2076-3417/8/10/1810

Internet

http://www.mdpi.com/2076-3417/8/10/1810

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